JSCJ AD-UMD10N

JSCJ · Transistors (BJTs) · MPN AD-UMD10N

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV
Input Resistor2.2kΩ
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
typeNPN+PNP
Resistor Ratio21
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363

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