JSCJ AD-MMBT5551-H

JSCJ · Transistors (BJTs) · MPN AD-MMBT5551-H

No reviews yet — be the first to review JSCJ AD-MMBT5551-H.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 300mW Surface Mount SOT-23

Related Transistors (BJTs)