JSCJ AD-MMBT5401-H

JSCJ · Transistors (BJTs) · MPN AD-MMBT5401-H

No reviews yet — be the first to review JSCJ AD-MMBT5401-H.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 150V 0.6A 100MHz 0.3W Surface Mount SOT-23

Related Transistors (BJTs)