JSCJ AD-BC856S

JSCJ · Transistors (BJTs) · MPN AD-BC856S

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO5V
DC Current Gain110
Pd - Power Dissipation0.2mW
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 65V 0.1A 100MHz 0.2mW Surface Mount SOT-363

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