JSCJ 3DD13007N36F

JSCJ · Transistors (BJTs) · MPN 3DD13007N36F

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain10
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))3V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 400V 8A 4MHz 2W Through Hole TO-220F

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