JSCJ 3DD13003B

JSCJ · Transistors (BJTs) · MPN 3DD13003B

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Specifications

Current - Collector Cutoff100uA
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain40
Pd - Power Dissipation900mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))3V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 400V 1.5A 0.9W Through Hole TO-92

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