JSCJ 3DD13001B(RANGE:23-26)

JSCJ · Transistors (BJTs) · MPN 3DD13001B(RANGE:23-26)

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)8MHz
Collector - Emitter Voltage VCEO420V
Emitter-Base Voltage VEBO7V
DC Current Gain23
Pd - Power Dissipation750mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 420V 0.2A 8MHz 0.75W Through Hole TO-92

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