JSCJ 3DD13001-TA

JSCJ · Transistors (BJTs) · MPN 3DD13001-TA

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)8MHz
Collector - Emitter Voltage VCEO450V
Emitter-Base Voltage VEBO8V
DC Current Gain14
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 450V 0.2A 8MHz 0.625W Through Hole TO-92

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