JSCJ 2SD886

JSCJ · Transistors (BJTs) · MPN 2SD886

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 50V 3A 80MHz 1W Through Hole TO-126-3

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