JSCJ 2SD879

JSCJ · Transistors (BJTs) · MPN 2SD879

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO10V
Emitter-Base Voltage VEBO6V
DC Current Gain140
Pd - Power Dissipation750mW
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))400mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 10V 3A 200MHz 750mW Through Hole TO-92

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