JSCJ 2SD667A

JSCJ · Transistors (BJTs) · MPN 2SD667A

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation900mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))1V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 100V 1A 140MHz 900mW Through Hole TO-92-3

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