JSCJ 2SD313

JSCJ · Transistors (BJTs) · MPN 2SD313

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)8MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain40
Pd - Power Dissipation1.75W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 60V 3A 8MHz 1.75W Through Hole TO-220-3L

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