JSCJ 2SD2012

JSCJ · Transistors (BJTs) · MPN 2SD2012

No reviews yet — be the first to review JSCJ 2SD2012.

Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

60V 100 1 NPN NPN 3A TO-220F Single Bipolar Transistors RoHS

Related Transistors (BJTs)