JSCJ 2SB647

JSCJ · Transistors (BJTs) · MPN 2SB647

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain320
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation750mW
typePNP
Number1 PNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))1V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 80V 1A 140MHz 750mW Through Hole TO-92L

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