JSCJ 2SB1182

JSCJ · Transistors (BJTs) · MPN 2SB1182

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO32V
Emitter-Base Voltage VEBO5V
DC Current Gain82
Pd - Power Dissipation1.5W
Number1 PNP
typePNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))800mV

Technical details

Bipolar (BJT) Transistor PNP 32V 2A 100MHz 1.5W Surface Mount TO-252-2L

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