JSCJ 2SB1116

JSCJ · Transistors (BJTs) · MPN 2SB1116

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)70MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain135
Pd - Power Dissipation350mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 50V 1A 70MHz 0.35W Surface Mount SOT-23

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