JSCJ 2N6718

JSCJ · Transistors (BJTs) · MPN 2N6718

No reviews yet — be the first to review JSCJ 2N6718.

Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain80
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 100V 1A 50MHz 625mW Through Hole TO-92

Related Transistors (BJTs)