JSCJ 2N6520

JSCJ · Transistors (BJTs) · MPN 2N6520

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO350V
DC Current Gain200
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation625mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor 350V 0.5A 200MHz 0.625W Through Hole TO-92

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