Jingdao Microelectronics BC856B

Jingdao Microelectronics · Transistors (BJTs) · MPN BC856B

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
DC Current Gain800
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 0.1A 200mW Surface Mount SOT-23

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