Jilin Sino-Microelectronics 3DD13007MD

Jilin Sino-Microelectronics · Transistors (BJTs) · MPN 3DD13007MD

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain8
Pd - Power Dissipation80W
Number1 NPN
typeNPN
Current - Collector(Ic)8A
Operating Temperature-
Vce Saturation(VCE(sat))2.5V

Technical details

Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Through Hole TO-220HF

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