Jilin Sino-Microelectronics 3DD13005ED

Jilin Sino-Microelectronics · Transistors (BJTs) · MPN 3DD13005ED

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain30
Pd - Power Dissipation75W
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor 400V 4A 4MHz 75W Through Hole TO-126S

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