Jilin Sino-Microelectronics 3DD13003E1D-92-FJ

Jilin Sino-Microelectronics · Transistors (BJTs) · MPN 3DD13003E1D-92-FJ

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain7
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-
Vce Saturation(VCE(sat))800mV

Technical details

Bipolar (BJT) Transistor NPN 400V 1.5A 1W Through Hole TO-92-3

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