Jiangsu JieJie Microelectronics JMTJ3400A

Jiangsu JieJie Microelectronics · Transistors (BJTs) · MPN JMTJ3400A

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Specifications

Drain to Source Voltage30V
Current - Continuous Drain(Id)5.8A
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation1.3W
RDS(on)20.5mΩ@10V;22mΩ@4.5V;27.1mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)54pF
Number1 N-channel
typeN-Channel
Input Capacitance(Ciss)785pF
Gate Charge(Qg)19nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)65pF

Technical details

30V 5.8A 950mV 1 N-channel N-Channel SOT-23-3L Single Bipolar Transistors RoHS

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