Infineon SMBTA 06UPN E6327

Infineon · Transistors (BJTs) · MPN SMBTA 06UPN E6327

No reviews yet — be the first to review Infineon SMBTA 06UPN E6327.

Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation330mW
Collector - Emitter Voltage VCEO80V
DC Current Gain100
Emitter-Base Voltage VEBO4V
Transition frequency(fT)100MHz
typeNPN+PNP
Vce Saturation(VCE(sat))250mV
Number1 NPN + 1 PNP
Current - Collector(Ic)500mA

Technical details

330mW 80V 100 NPN+PNP 500mA SC-74 Bipolar Transistor Arrays RoHS

Related Transistors (BJTs)