Infineon SMBT 3906S H6327

Infineon · Transistors (BJTs) · MPN SMBT 3906S H6327

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Specifications

Current - Collector Cutoff50nA
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation250mW
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))-
Current - Collector(Ic)200mA

Technical details

100 40V 250mW 200mA SOT-363 Bipolar Transistor Arrays RoHS

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