Infineon · Memory ICs · MPN S29GL512T11DHAV20
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| Voltage - Supply | 2.7V~3.6V |
|---|---|
| Memory Size | 512Mbit |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC err… |
| Data Retention - TDR (Year) | 20 Years |
| Page Programming Time (Tpp) | 60ns |
| Interface | Parallel |
| Standby Supply Current | 100uA |
2.7V~3.6V 512Mbit Parallel FBGA-64(9x9) Memory (ICs) RoHS