Infineon IRS26302DJPBF

Infineon · Power Management ICs · MPN IRS26302DJPBF

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Specifications

Rise Time125ns
Fall Time50ns
FeaturesEnable shutdown;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)200mA
Load TypeMOSFET;IGBT
Operating Temperature-40℃~+150℃
Voltage - Supply10V~20V
Driven Configuration-
Current - Output Low(IOL)350mA

Technical details

200mA 10V~20V 350mA PLCC-32(16.6x16.6) Gate Drivers RoHS

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