Infineon IRS2109PBF

Infineon · Power Management ICs · MPN IRS2109PBF

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Specifications

Rise Time100ns
Fall Time35ns
FeaturesEnable shutdown;Dead-time control;Interleaved conduction protection
Current - Output High(IOH)290mA
Load TypeMOSFET;IGBT
Operating Temperature-40℃~+150℃
Voltage - Supply10V~20V
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)600mA

Technical details

290mA 10V~20V 600mA PDIP-8 Gate Drivers RoHS

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