Infineon/CYPRESS · Memory ICs · MPN S34ML04G104BHI010Z
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| Voltage - Supply | 2.7V~3.6V |
|---|---|
| Memory Size | 4Gbit |
| Operating temperature | - |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Read buffer function;Copy back write function;Hardware write protection function;ECC error correction function;OTP regi… |
| Data Retention - TDR (Year) | - |
| Block Erase Time(tBE) | 3.5ms |
| Page Programming Time (Tpp) | 200us |
| Write Cycle Time(tWC) | - |
| Standby Supply Current | 100uA |
| Interface | - |
2.7V~3.6V 4Gbit Memory (ICs) RoHS