Infineon BSP61E6327

Infineon · Transistors (BJTs) · MPN BSP61E6327

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain2000
Pd - Power Dissipation1.5W
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))1.8V

Technical details

60V 2000 PNP 1A SOT-223 Single Bipolar Transistors RoHS

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