Infineon BFR949L3E6327

Infineon · Transistors (BJTs) · MPN BFR949L3E6327

No reviews yet — be the first to review Infineon BFR949L3E6327.

Specifications

Collector - Emitter Voltage VCEO10V
DC Current Gain100
Pd - Power Dissipation250mW
Current - Collector(Ic)50mA
Operating Temperature-
Transition frequency(fT)9GHz
typeNPN

Technical details

10V 100 250mW 50mA NPN TSLP-3-1 Bipolar RF Transistors RoHS

Related Transistors (BJTs)