Infineon · Transistors (BJTs) · MPN BFR949L3E6327
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| Collector - Emitter Voltage VCEO | 10V |
|---|---|
| DC Current Gain | 100 |
| Pd - Power Dissipation | 250mW |
| Current - Collector(Ic) | 50mA |
| Operating Temperature | - |
| Transition frequency(fT) | 9GHz |
| type | NPN |
10V 100 250mW 50mA NPN TSLP-3-1 Bipolar RF Transistors RoHS