Infineon · Transistors (BJTs) · MPN BFR843EL3E6327XTSA1
No reviews yet — be the first to review Infineon BFR843EL3E6327XTSA1.
| Emitter-Base Voltage(Vebo) | 2.6V |
|---|---|
| Current - Collector Cutoff | 400nA |
| Collector - Emitter Voltage VCEO | 2.6V |
| Pd - Power Dissipation | 125mW |
| DC Current Gain | 580 |
| Current - Collector(Ic) | 55mA |
| Configuration | Standalone |
| type | NPN |
Bipolar (BJT) Transistor 2.6V 55mA 125mW Surface Mount TSLP-3