Infineon BFR750L3RHE6327

Infineon · Transistors (BJTs) · MPN BFR750L3RHE6327

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Specifications

Collector - Emitter Voltage VCEO4.7V
Pd - Power Dissipation360mW
DC Current Gain160
Current - Collector(Ic)90mA
Operating Temperature-
Transition frequency(fT)37GHz
typeNPN

Technical details

4.7V 360mW 160 90mA NPN TSLP-3 Bipolar RF Transistors RoHS

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