Infineon BFR183E6327HTSA1

Infineon · Transistors (BJTs) · MPN BFR183E6327HTSA1

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Specifications

Emitter-Base Voltage(Vebo)2V
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO12V
DC Current Gain70
Pd - Power Dissipation450mW
Current - Collector(Ic)65mA
Transition frequency(fT)8GHz
typeNPN
Number1 NPN

Technical details

12V 70 450mW 65mA NPN SOT-23-3 Bipolar RF Transistors RoHS

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