Infineon BFR181WE6327

Infineon · Transistors (BJTs) · MPN BFR181WE6327

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Specifications

Transition frequency(fT)8GHz
Collector - Emitter Voltage VCEO12V
DC Current Gain70
Pd - Power Dissipation175mW
typeNPN
Current - Collector(Ic)20mA
Operating Temperature-

Technical details

12V 70 NPN 20mA SOT-323 Single Bipolar Transistors RoHS

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