Infineon · Transistors (BJTs) · MPN BFR106E6327
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| Emitter-Base Voltage(Vebo) | 3V |
|---|---|
| Current - Collector Cutoff | 30nA |
| Collector - Emitter Voltage VCEO | 16V |
| DC Current Gain | 70 |
| Pd - Power Dissipation | 700mW |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 210mA |
| Transition frequency(fT) | 3.5GHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
| Number | 1 NPN |
Bipolar (BJT) Transistor NPN 16V 210mA 3.5GHz 700mW Surface Mount SOT-23