Infineon BFP843H6327

Infineon · Transistors (BJTs) · MPN BFP843H6327

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Specifications

Current - Collector Cutoff400nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO2.25V
DC Current Gain450
Pd - Power Dissipation125mW
ConfigurationStandalone
Number1 NPN
typeNPN
Current - Collector(Ic)55mA
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 2.25V 55mA 125mW Surface Mount SOT-343-4

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