Infineon · Transistors (BJTs) · MPN BFP842ESDH6327XTSA1
No reviews yet — be the first to review Infineon BFP842ESDH6327XTSA1.
| Current - Collector Cutoff | 400nA |
|---|---|
| Collector - Emitter Voltage VCEO | 3.25V |
| Pd - Power Dissipation | 120mW |
| DC Current Gain | 150 |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | - |
| Transition frequency(fT) | 57GHz |
| type | NPN |
3.25V 120mW 150 NPN SOT-343-4 Bipolar RF Transistors RoHS