Infineon BFP760H6327

Infineon · Transistors (BJTs) · MPN BFP760H6327

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Specifications

Emitter-Base Voltage(Vebo)1.2V
Current - Collector Cutoff40nA
Collector - Emitter Voltage VCEO4V
DC Current Gain160
Pd - Power Dissipation240mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)70mA
Transition frequency(fT)45GHz
Vce Saturation(VCE(sat))-
typeNPN

Technical details

Bipolar (BJT) Transistor NPN 4V 70mA 45GHz 240mW Surface Mount SOT-343

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