Infineon · Transistors (BJTs) · MPN BFP740H6327
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| Emitter-Base Voltage(Vebo) | 1.2V |
|---|---|
| Current - Collector Cutoff | 40nA |
| Collector - Emitter Voltage VCEO | 4V |
| DC Current Gain | 160 |
| Pd - Power Dissipation | 160mW |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 45mA |
| Transition frequency(fT) | 44GHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
| Number | 1 NPN |
Bipolar (BJT) Transistor NPN 4V 45mA 44GHz 160mW Surface Mount SOT-343-4