Infineon BFP740FH6327

Infineon · Transistors (BJTs) · MPN BFP740FH6327

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Specifications

Emitter-Base Voltage(Vebo)1.2V
Current - Collector Cutoff40nA
Collector - Emitter Voltage VCEO4V
DC Current Gain400
Pd - Power Dissipation160mW
Current - Collector(Ic)45mA
Transition frequency(fT)45GHz
typeNPN
Number1 NPN

Technical details

Bipolar (BJT) Transistor NPN 4V 45mA 45GHz 160mW TSFP-4

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