Infineon · Transistors (BJTs) · MPN BFP650H6327
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| Current - Collector Cutoff | 40nA |
|---|---|
| Transition frequency(fT) | 42GHz |
| Collector - Emitter Voltage VCEO | 4V |
| Emitter-Base Voltage VEBO | 1.2V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 500mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 150mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | - |
Bipolar (BJT) Transistor NPN 4V 150mA 42GHz 500mW Surface Mount SOT-343-4