Infineon · Transistors (BJTs) · MPN BFP640H6327
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| Current - Collector Cutoff | 40nA |
|---|---|
| Transition frequency(fT) | 42GHz |
| Collector - Emitter Voltage VCEO | 4.1V |
| Emitter-Base Voltage VEBO | 1.2V |
| DC Current Gain | 110 |
| Pd - Power Dissipation | 200mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 50mA |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN 4.1V 50mA 42GHz 200mW Surface Mount SOT-343