Infineon · Transistors (BJTs) · MPN BFP640ESDH6327
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| Current - Collector Cutoff | 500nA |
|---|---|
| Collector - Emitter Voltage VCEO | 4.1V |
| DC Current Gain | 110 |
| Pd - Power Dissipation | - |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | - |
| Transition frequency(fT) | 45GHz |
| type | NPN |
4.1V 110 NPN SOT-343-4 Bipolar RF Transistors RoHS