Infineon · Transistors (BJTs) · MPN BFP640E6327
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| Collector - Emitter Voltage VCEO | 4.5V |
|---|---|
| DC Current Gain | 110 |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 50mA |
| Operating Temperature | - |
| Transition frequency(fT) | 40GHz |
| type | NPN |
4.5V 110 200mW 50mA NPN SOT-343-4 Bipolar RF Transistors RoHS