Infineon BFP520FE6327

Infineon · Transistors (BJTs) · MPN BFP520FE6327

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Specifications

Collector - Emitter Voltage VCEO3.5V
DC Current Gain70
Pd - Power Dissipation100mW
Current - Collector(Ic)40mA
Operating Temperature-
Transition frequency(fT)45GHz
typeNPN

Technical details

3.5V 70 100mW 40mA NPN TSFP-4 Bipolar RF Transistors RoHS

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