Infineon BFP490E6327

Infineon · Transistors (BJTs) · MPN BFP490E6327

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Specifications

Emitter-Base Voltage(Vebo)1.5V
Current - Collector Cutoff1.8uA
Collector - Emitter Voltage VCEO4.5V
Pd - Power Dissipation1W
DC Current Gain50
Operating Temperature-65℃~+150℃
Current - Collector(Ic)600mA
Transition frequency(fT)17.5GHz
typeNPN
Number1 NPN

Technical details

4.5V 1W 50 600mA NPN SCD-80-2 Bipolar RF Transistors RoHS

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