Infineon · Transistors (BJTs) · MPN BFP410H6327
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| Emitter-Base Voltage(Vebo) | 1.5V |
|---|---|
| Current - Collector Cutoff | 30nA |
| Collector - Emitter Voltage VCEO | 5V |
| DC Current Gain | 60 |
| Pd - Power Dissipation | 150mW |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 40mA |
| Transition frequency(fT) | 25GHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
Bipolar (BJT) Transistor NPN 5V 40mA 25GHz 150mW Surface Mount SOT-343-4