Infineon BFP196WE6327

Infineon · Transistors (BJTs) · MPN BFP196WE6327

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Specifications

Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation700mW
DC Current Gain70
Current - Collector(Ic)-
Operating Temperature-
Transition frequency(fT)7.5GHz
typeNPN

Technical details

12V 700mW 70 NPN SOT-343-4 Bipolar RF Transistors RoHS

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