Infineon · Transistors (BJTs) · MPN BFP196E6327HTSA1
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| Emitter-Base Voltage(Vebo) | 2V |
|---|---|
| Current - Collector Cutoff | 100nA |
| Collector - Emitter Voltage VCEO | 12V |
| Pd - Power Dissipation | 700mW |
| DC Current Gain | 70 |
| Operating Temperature | -65℃~+150℃ |
| Current - Collector(Ic) | 150mA |
| Transition frequency(fT) | 7.5GHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
Bipolar (BJT) Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount SOT-143-4